STUDI PENUMBUHAN LAPISAN TIPIS COPPER PHTHALOCYANINE PADA INDIUM TIN OXIDE MENGGUNAKAN METODE EVAPORASI DENGAN VARIASI ARUS

Oleh :
BUDHI ARSITA KURNIAWATI - M0201001 -

There has been result CuPc thin film grown on ITO substrate using evaporation method. CuPc thin film has been grown with current deposition 35 A, 40 A and 45 A. Characteristic of CuPc thin film using Scanning Electron Microscopy to determined the morphology structure, composition and thickness. X-Ray diffractometer used to estimate crystallizations structure of CuPc thin film. The resistance of thin film determined using I-V method. CuPC thin film has morphology structure which more grains of CuPc that has been deposited, the more contoured the structure that makes it dark, the composition of CuPc are Carbon (C), Nitrogen (N), Oxygen (O) and Copper (Cu). CuPc thin film thickness result range 0.37 m m to 0.69 m m . X-Ray diffraction model of CuPc thin film occur in angel 2q 6.9 o , 24.1 o , 26.8 o and 28.4 o . the resistance value depend with the current deposition. The more bigger the current deposition makes the resistance is bigger too. Key word : CuPc thin film, evaporation, current deposition.