ANALISA PENGARUH WAKTU IRADIASI GAMMA (γ) TERHADAP PERUBAHAN RESISTIVITAS DAN KONDUKTIVITAS SERTA STRUKTUR KRISTAL WAFER SILIKON (Si) TIPE-N

Oleh :
ISWARDHANI - M0204033 -

ABSTRACT The research is about the irradiation of gamma foton to the sample of extrinsic Silicon wafer type-N with the source of radioisotope Cesium-137 irradiation is about 0,645 Curie, 0,662 MeV and 0,222 R/hour per Curie every meter (m). The research conducted with the dosage variation of foton gamma irradiation. Research also conducted a resistivity and conductivity test with FPP 5000 Veeco and also the characteristic of Silicon wafer chrystal structure with XRD Shimadzu 6000. Foton gamma irradiation caused the increased of resistivity and decreased conductivity and also changes of the conduction type to become type-P. The changer of resistivity and conductivity was caused by the atom system atom low elektron in valency band as the result of compton scatteries with foton energy 0,478 MeV and elektron kinetic energy 0,184 MeV, so there is a load carrier changement that caused the change of conduction of type to become conduction type-P. The sample characteristics with XRD was not shown that there are any changes in chrystal structure as the result of foton gamma irradiation. The research findings was stated that foton gamma irradiation 0,645 Curie with 0,662 MeV power and 0,222 R/hours irradiation dosage per Curie in every metre (m) is save for the Silicon material. Key word : gamma radiation, Cesium-137, silicon, resistivity, XRD