Penulis Utama : YULIANA SHANDRA DEWI
NIM / NIP : M0204065
× ABSTRACT Implantation of reactive element ion of yttrium into FeNiCrMo materials to know their effects and to know protective oxid layer formed before and after oxidation process. Ion implantation process used implantor machine 150 keV/2mA owner PTAPB-BATAN, Yogyakarta at energy 100 keV/2 mA with two varied of dose such as 2,981x1015 ion/cm2 and 4,471x1015 ion/cm2. Testing of oxidation resistance was conducted for 5 thermal cycling has been done in furnace tube RTI/AGG Volt/Amp: 220/45, Hertz: 50-60, max temp: 1500 oC, introduce by oxygen gas with with the flow speed 0,19168 cc/minute, pressure 1 bar. Warming time every thermal cycling for 6 hours at temperature 850 oC and the cooling time for 18 hours at temperature room. Changing of oxidation resistance was obtained by weighing the mass changing of the samples FeNiCrMo for every cycling thermal using analytical balance. The result caracteritation of ion yttrium implantation on FeNiCrMo materials for all of various dose and also the result testing of oxidation using X-Rays Diffractometer. From the thermal cycling testing, was obtained that the oxidation resistance properties of FeNiCrMo wich implanted yttrium after second cycling still better with shown by decrease oxidation speed. Protective oxid layer was formed after oxidation dose 2,981x1015 ion/cm2 is Y5Mo2O12 in level (131), even though dose 4,471x1015 ion/cm2 is Y5Mo2O12 in level (131) and Y2Mo2O7 in level (400).
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Penulis Utama : YULIANA SHANDRA DEWI
Penulis Tambahan : -
NIM / NIP : M0204065
Tahun : 2008
Judul : PENGARUH IMPLANTASI ION YTTRIUM (Y) TERHADAP SIFAT KETAHANAN OKSIDASI SUHU TINGGI MATERIAL FeNiCrMo
Edisi :
Imprint : Surakarta - FMIPA - 2008
Program Studi : S-1 Fisika
Kolasi :
Sumber :
Kata Kunci :
Jenis Dokumen : Skripsi
ISSN :
ISBN :
Link DOI / Jurnal : -
Status : Public
Pembimbing : 1. Utari, S.Si, M.Si
2. Dra. Lely Susita R.M
Penguji :
Catatan Umum :
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